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CSD18501Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET

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ChongMing Group (HK) Int'l Co., Ltd

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Brand Name : Ti

Model Number : CSD18501Q5A

MOQ : Contact us

Price : Contact us

Payment Terms : Paypal, Western Union, TT

Supply Ability : 50000 Pieces per Day

Delivery Time : The goods will be shipped within 3 days once received fund

Packaging Details : DFN56

Description : N-Channel 40 V 22A (Ta), 100A (Tc) 3.1W (Ta), 150W (Tc) Surface Mount 8-VSONP (5x6)

Packaging : Cut Tape

Height : 1 mm

Transistor Type : 1 N-Channel

Width : 4.9 mm

Brand : Texas Instruments

Forward Transconductance - Min : 118 S

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CSD18501Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET

1 Features

2 Applications

3 Description

This 40 V, 2.5 mΩ, SON 5 × 6 mm NexFETTM power MOSFET has been designed to minimize losses in power conversion applications.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	40		V
Qg	Gate Charge Total (4.5 V)	20		nC
Qgd	Gate Charge Gate-to-Drain	5.9		nC
RDS(on)	Drain-to-Source On-Resistance	VGS = 4.5 V	3.3	mΩ
RDS(on)	Drain-to-Source On-Resistance	VGS =10V	2.5	mΩ
VGS(th)	Threshold Voltage	1.8		V

Ordering Information(1)

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-Source Voltage	40	V
VGS	Gate-to-Source Voltage	±20	V
ID	Continuous Drain Current (Package limited)	100	A
	Continuous Drain Current (Silicon limited), TC = 25°C	161	A
	Continuous Drain Current (1)	22	A
IDM	Pulsed Drain Current (2)	400	A
PD	Power Dissipation(1)	3.1	W
PD	Power Dissipation, TC = 25°C	150	W
TJ, Tstg	Operating Junction and Storage Temperature Range	–55 to 150	°C
EAS	Avalanche Energy, Single Pulse ID =68A,L=0.1mH,RG =25Ω	231	mJ

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mosfet motor control circuit

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