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SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8

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ChongMing Group (HK) Int'l Co., Ltd

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Brand Name : Ti

Model Number : SI7139DP-T1-GE3

MOQ : Contact us

Price : Contact us

Payment Terms : Paypal, Western Union, TT

Supply Ability : 50000 Pieces per Day

Delivery Time : The goods will be shipped within 3 days once received fund

Packaging Details : SOT223

Description : MOSFET P-CH 60V 8.6A PPAK SO-8

Vgs th - Gate-Source Threshold Voltage : 1 V

Id - Continuous Drain Current : 14.4 A

Vds - Drain-Source Breakdown Voltage : 60 V

Vgs - Gate-Source Voltage : 10 V

Qg - Gate Charge : 121 nC

Pd - Power Dissipation : 5.4 W

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SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8

FEATURES

for definitions of compliance please see www.vishay.com/doc?99912

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER		SYMBOL	10 s	STEADY STATE	UNIT
Drain-Source Voltage		VDS	-60		V
Gate-Source Voltage		VGS	± 20
Continuous Drain Current (TJ = 150 °C) a	TA =25°C	ID	-14.4	-8.6	A
	TA =70°C		-11.5	-6.9
Pulsed Drain Current		IDM	-60
Continuous Source Current (Diode Conduction) a		IS	-4.5	-1.6
Avalanche Current	L = 0.1 mH	IAS	50
Single Pulse Avalanche Energy		EAS	125		mJ
Maximum Power Dissipation a	TA =25°C	PD	5.4	1.9	W
	TA =70°C		3.4	1.2
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to +150		°C
Soldering Recommendations (Peak Temperature) b, c			260

THERMAL RESISTANCE RATINGS
PARAMETER		SYMBOL	TYPICAL	MAXIMUM	UNIT
Maximum Junction-to-Ambient a	t  10 s	RthJA	18	23	°C/W
Maximum Junction-to-Ambient a	Steady State	RthJA	52	65
Maximum Junction-to-Case (Drain)	Steady State	RthJC	1	1.3

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mosfet motor control circuit

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