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Schottky Barrier Diode Electronics Diodes IC Chip BAS85,135

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Schottky Barrier Diode Electronics Diodes IC Chip BAS85,135

Model Number : BAS85

Certification : Original Factory Pack

Place of Origin : China

MOQ : 100pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 6200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Description : Diode 30 V 200mA Surface Mount LLDS; MiniMelf

Package : 2500pcs/Reel

Main Line : Ic,module,transistor,diodes,capacitor,resistor etc

continuous reverse voltage : 30 V

continuous forward current : 200 mA

average forward current : 200 mA

storage temperature : −65 +150 ° °C

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Schottky Barrier Diode Electronics Diodes IC Chip BAS85

BAS85 Schottky barrier diode

FEATURES

• Low forward voltage

• High breakdown voltage

• Guard ring protected

• Hermetically-sealed small SMD package.

DESCRIPTION

Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering.

APPLICATIONS

• Ultra high-speed switching

• Voltage clamping

• Protection circuits

• Blocking diodes.

SYMBOL PARAMETER CONDITIONS

MIN. MAX. UNIT VR continuous reverse voltage − 30 V

IF continuous forward current − 200 mA

IF(AV) average forward current VRWM = 25 V; a = 1.57; δ = 0.5;

note 1; Fig.2 − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA I

FSM non-repetitive peak forward current tp = 10 ms − 5 A

Tstg storage temperature −65 +150 °C

Tj junction temperature − 125 °C

Tamb operating ambient temperature −65 +125 °C

SYMBOL	PARAMETER	CONDITIONS	MAX	UNIT
V_F	Forward Voltage	I_F=0.1mA I_F=1mA I_F=10mA I_F=30mA I_F=100mA	240 320 400 500 800	mV mV mV mV mV
IR		Vr=25V	2.3	uA
C_d	diode capacitance	f=1 MHz Vr=1V	10	pF

Product Tags:

bridge rectifier circuit

signal schottky diode

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