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Model Number : CNY74-2
Certification : new & original
Place of Origin : original factory
MOQ : 10pcs
Price : Negotiate
Payment Terms : T/T, Western Union, Paypal
Supply Ability : 8200pcs
Delivery Time : 1 day
Packaging Details : Please contact me for details
Description : Optoisolator Transistor Output 5300Vrms 2 Channel 8-DIP
Reverse voltage : 6V
Forward current : 60mA
Forward surge current : 1.5A
Power dissipation : 100mW
Junction temperature : 125°C
Forward voltage : 1.6V
CNY74-2 Power Mosfet Transitor Multichannel Optocoupler with Phototransistor Output
Description
The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
Applications
Galvanically separated circuits, non-interacting switches
Features
CNY74-2H includes 2 isolater channels
CNY74-4H includes 4 isolater channels
Isolation test voltage VIO = 5 kV
Test class 25/100/21 DIN 40 045
Low coupling capacitance of typical 0.3 pF Current Transfer Ratio (CTR) of typical 100% Low temperature coefficient of CTR
Wide ambient temperature range
Underwriters Laboratory (UL) 1577 recognized, file number E-76222
CSA (C–UL) 1577 recognized, file number E-76222 – Double Protection
Coupling System U
Order Instruction
| Ordering Code | CTR Ranking | Remarks | 
|---|---|---|
| CNY74–2H | 50 to 600% | 8 Pin = Dual channel | 
| CNY74–4H | 50 to 600% | 16 Pin = Quad channel | 
Absolute Maximum Ratings Input (Emitter)
Input (Emitter)
| Parameter | Test Conditions | Symbol | Value | Unit | 
|---|---|---|---|---|
| Reverse voltage | VR | 6 | V | |
| Forward current | IF | 60 | mA | |
| Forward surge current | tp ≤ 10s | IFSM | 1.5 | A | 
| Power dissipation | Tamb ≤ 25C | PV | 100 | mW | 
| Junction temperature | Tj | 125 | °C | 
Output (Detector)
| Parameter | Test Conditions | Symbol | Value | Unit | 
|---|---|---|---|---|
| Collector emitter voltage | VCEO | 70 | V | |
| Emitter collector voltage | VECO | 7 | V | |
| Collector current | IC | 50 | mA | |
| Peak collector current | tp/T = 0.5, tp ≤ 10 ms | ICM | 100 | mA | 
| Power dissipation | Tamb ≤ 25C | PV | 150 | mW | 
| Junction temperature | Tj | 125 | °C | 
Coupler
| Parameter | Test Conditions | Symbol | Value | Unit | 
|---|---|---|---|---|
| AC isolation test voltage (RMS) | t = 1 min | VIO 1) | 5 | kV | 
| Total power dissipation | Tamb ≤ 25C | Ptot | 250 | mW | 
| Ambient temperature range | Tamb | –40 to +100 | °C | |
| Storage temperature range | Tstg | –55 to +125 | °C | |
| Soldering temperature | Tsd | 260 | °C | |
| 1) Related to standard climate 23/50 DIN 50014 | ||||
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | 
|---|---|---|---|---|---|---|
| Forward voltage | IF = 50 mA | VF | 1.25 | 1.6 | V | 
Output (Detector)
| Parameter | Test Conditions | Symbol | Min | Typ. | Max. | Unit | 
|---|---|---|---|---|---|---|
| Collector emitter voltage | IC = 1 mA | VCEO | 70 | V | ||
| Emitter collector voltage | IE = 100 A | VECO | 7 | V | ||
| Collector dark current | VCE = 20 V, IF = 0, E = 0 | ICEO | 100 | nA | 
Coupler
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | 
| DC isolation test voltage | t = 2 s | VIO1) | 5 | kV | ||
| Isolation resistance | VIO = 1000 V, 40% relative humidity | RIO1) | 1012 | Ω | ||
| Collector emitter saturation voltage | IF = 10 mA, IC = 1 mA | VCEsat | 0.3 | V | ||
| Cut-off frequency | VCE = 5 V, IF = 10 mA, RL = 100 | fc | 100 | kHz | ||
| Coupling capacitance | f = 1 MHz | Ck | 0.3 | pF | ||
| 1) Related to standard climate 23/50 DIN 50014 | ||||||
Current Transfer Ratio (CTR)
| Parameter | Test Conditions | Type | Symbol | Min. | Typ. | Max. | Unit | 
|---|---|---|---|---|---|---|---|
| IC/IF | VCE = 5 V, IF = 5 mA | CTR | 0.5 | 1.0 | 6.0 | ||
| VCE = 5 V, IF = 10 mA | CTR | 0.6 | 1.2 | 
Switching Characteristics
| Parameter | Test Conditions | Symbol | Typ. | Unit | 
|---|---|---|---|---|
| Delay time | VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) | td | 3.0 | μS | 
| Rise time | tr | 3.0 | μS | |
| Fall time | tf | 4.7 | μS | |
| Storage time | ts | 0.3 | μS | |
| Turn-on time | ton | 6.0 | μS | |
| Turn-off time | toff | 5.0 | μS | |
| Turn-on time | VS = 5 V, IF = 10 mA, RL = 1 k (see figure 2) | ton | 9.0 | μS | 
| Turn-off time | toff | 18.0 | μS | 
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